?2010 fairchild semiconductor corporation 1 www.fairchildsemi.com FGB20N60SF rev. c0 FGB20N60SF 600 v, 20 a field stop igbt april 2013 absolute maximum ratings notes: 1: repetitive rating: pulse width limited by max. j unction temperature thermal characteristics notes: 2: mounted on 1 square pcb(fr4 or g-10 material) symbol description ratings unit v ces collector to emitter voltage 600 v v ges gate to emitter voltage 20 v i c collector current @ t c = 25 o c 40 a collector current @ t c = 100 o c 20 a i cm (1) pulsed collector current @ t c = 25 o c 60 a p d maximum power dissipation @ t c = 25 o c 208 w maximum power dissipation @ t c = 100 o c 83 w t j operating junction temperature -55 to +150 o c t stg storage temperature range -55 to +150 o c t l maximum lead temp. for soldering purposes, 1/8 from case for 5 seconds 300 o c symbol parameter typ. max. unit r jc thermal resistance, junction to case - 0.6 o c / w r ja thermal resistance, junction to ambient (pcb mount) (2) - 40 o c / w g collector (flange) d 2 -pak g c e e c FGB20N60SF 600 v, 20 a field stop igbt features ? high current capability ? low saturation voltage: v ce(sat) =2.2 v @ i c = 20 a ? high input impedance ? fast switching : e off = 8 uj/a ? rohs compliant applications ? solar inverter, ups, welder, pfc general description using novel field stop igbt technology, fairchild ? s field stop igbts offer the optimum performance for solar inver ter, ups, welder and pfc applications where low conduction an d switch- ing losses are essential.
FGB20N60SF 600 v, 20 a field stop igbt ?2010 fairchild semiconductor corporation 2 www.fairchildsemi.com FGB20N60SF rev. c0 package marking and ordering information electrical characteristics of the igbt t c = 25c unless otherwise noted device marking device package rel size tape width quanti ty FGB20N60SF FGB20N60SF to-263ab/d2-pak 13 dia - 800 symbol parameter test conditions min. typ. max. unit off characteristics bv ces collector to emitter breakdown voltage v ge = 0v, i c = 250 a 600 - - v ? bv ces ? t j temperature coefficient of breakdown voltage v ge = 0v, i c = 250 a - 0.6 - v/ o c i ces collector cut-off current v ce = v ces , v ge = 0v - - 250 a i ges g-e leakage current v ge = v ges , v ce = 0v - - 400 na on characteristics v ge(th) g-e threshold voltage i c = 250 a, v ce = v ge 4.0 5.0 6.5 v v ce(sat) collector to emitter saturation voltage i c = 20a , v ge = 15v - 2.2 2.8 v i c = 20a , v ge = 15v, t c = 125 o c - 2.4 - v dynamic characteristics c ies input capacitance v ce = 30v , v ge = 0v, f = 1mhz - 940 - pf c oes output capacitance - 110 - pf c res reverse transfer capacitance - 40 - pf switching characteristics t d(on) turn-on delay time v cc = 400v, i c = 20a, r g = 10 , v ge = 15v, inductive load, t c = 25 o c - 13 - ns t r rise time - 16 - ns t d(off) turn-off delay time - 90 - ns t f fall time - 24 48 ns e on turn-on switching loss - 0.37 - mj e off turn-off switching loss - 0.16 - mj e ts total switching loss - 0.53 - mj t d(on) turn-on delay time v cc = 400v, i c = 20a, r g = 10 , v ge = 15v, inductive load, t c = 125 o c - 12 - ns t r rise time - 16 - ns t d(off) turn-off delay time - 95 - ns t f fall time - 28 - ns e on turn-on switching loss - 0.4 - mj e off turn-off switching loss - 0.28 - mj e ts total switching loss - 0.69 - mj q g total gate charge v ce = 400v, i c = 20a, v ge = 15v - 65 - nc q ge gate to emitter charge - 7 - nc q gc gate to collector charge - 33 - nc
FGB20N60SF 600 v, 20 a field stop igbt ?2010 fairchild semiconductor corporation 3 www.fairchildsemi.com FGB20N60SF rev. c0 typical performance characteristics figure 1. typical output characteristics figure 2. typical output characteristics figure 3. typical saturation voltage figure 4. transfer characteristics characteristics figure 5. saturation voltage vs. case figure 6. saturation voltage vs. v ge temperature at variant current leve l 0.0 1.5 3.0 4.5 6.0 0 20 40 60 20v t c = 25 o c 15v 12v 10v v ge = 8v collector current, i c [a] collector-emitter voltage, v ce [v] 0.0 1.5 3.0 4.5 6.0 0 20 40 60 20v t c = 125 o c 15v 12v 10v v ge = 8v collector current, i c [a] collector-emitter voltage, v ce [v] 0 1 2 3 4 5 0 20 40 60 common emitter v ge = 15v t c = 25 o c t c = 125 o c collector current, i c [a] collector-emitter voltage, v ce [v] 4 6 8 10 12 0 20 40 60 common emitter v ce = 20v t c = 25 o c t c = 125 o c collector current, i c [a] gate-emitter voltage,v ge [v] 25 50 75 100 125 1 2 3 4 40a 20a i c = 10a common emitter v ge = 15v collector-emitter voltage, v ce [v] collector-emitter case temperature, t c [ o c] 0 4 8 12 16 20 0 4 8 12 16 20 i c = 10a 20a 40a common emitter t c = -40 o c collector-emitter voltage , v ce [v] gate-emitter voltage, v ge [v]
FGB20N60SF 600 v, 20 a field stop igbt ?2010 fairchild semiconductor corporation 4 www.fairchildsemi.com FGB20N60SF rev. c0 typical performance characteristics figure 7. saturation voltage vs. v ge figure 8. saturation volt age vs. v ge figure 9. capacitance characteristics figure 10. gate charge characteristics figure 11. soa characteristics figure 12. turn-on characteristi cs vs. gate resistance 0 4 8 12 16 20 0 4 8 12 16 20 i c = 10a 20a 40a common emitter t c = 25 o c collector-emitter voltage , v ce [v] gate-emitter voltage, v ge [v] 0 4 8 12 16 20 0 4 8 12 16 20 40a i c = 10a 2 0a common emitter t c = 125 o c collector-emitter voltage, v ce [v] gate-emitter voltage, v ge [v] 0.1 1 10 0 500 1000 1500 2000 2500 common emitter v ge = 0v, f = 1mhz t c = 25 o c c res c oes c ies capacitance [pf] collector-emitter voltage, v ce [v] 30 0 20 40 60 80 0 3 6 9 12 15 common emitter t c = 25 o c 300v 200v v cc = 100v gate-emitter voltage, v ge [v] gate charge, q g [nc] 0 10 20 30 40 50 60 5 10 100 common emitter v cc = 400v, v ge = 15v i c = 20a t c = 25 o c t c = 125 o c t d(on) t r switching time [ns] gate resistance, r g [ ? ] 1 10 100 1000 0.1 1 10 100 1ms 10 ms dc *notes: 1. t c = 25 o c 2. t j = 150 o c 3. single pulse 10 ? s 100 ? s collector current, i c [a] collector-emitter voltage, v ce [v]
FGB20N60SF 600 v, 20 a field stop igbt ?2010 fairchild semiconductor corporation 5 www.fairchildsemi.com FGB20N60SF rev. c0 typical performance characteristics figure 13. turn-off characteristics vs. figure 14. turn-on characteristics v s. gate resistance colle ctor current figure 15. turn-off characteristics vs. figure 16. switching loss vs. collector current gate resistance figure 17. switching loss vs. figure 18. turn off switching collector current soa characteristics 0 10 20 30 40 50 60 10 100 1000 common emitter v cc = 400v, v ge = 15v i c = 20a t c = 25 o c t c = 125 o c t d(off) t f switching time [ns] gate resistance, r g [ ? ] 0 10 20 30 40 3 10 100 200 common emitter v ge = 15v, r g = 10 ? t c = 25 o c t c = 125 o c t r t d(on) switching time [ns] collector current, i c [a] 0 10 20 30 40 10 100 300 common emitter v ge = 15v, r g = 10 ? t c = 25 o c t c = 125 o c t d(off) t f switching time [ns] collector current, i c [a] 0 10 20 30 40 50 60 0.1 1 3 common emitter v cc = 400v, v ge = 15v i c = 20a t c = 25 o c t c = 125 o c e on e off switching loss [mj] gate resistance, r g [ ? ] 1 10 100 1000 1 10 80 safe operating area v ge = 15v, t c = 125 o c collector current, i c [a] collector-emitter voltage, v ce [v] 0 10 20 30 40 0.02 0.1 1 10 common emitter v ge = 15v, r g = 10 ? t c = 25 o c t c = 125 o c e on e off switching loss [mj] collector current, i c [a]
FGB20N60SF 600 v, 20 a field stop igbt ?2010 fairchild semiconductor corporation 6 www.fairchildsemi.com FGB20N60SF rev. c0 typical performance characteristics figure 19.transient thermal impedance of igbt 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 0.01 0.1 1 0.01 0.02 0.1 0.05 0.2 single pulse thermal response [zthjc] rectangular pulse duration [sec] duty factor, d = t1/t2 peak t j = pdm x zthjc + t c 0.5 t 1 p dm t 2
FGB20N60SF 600 v, 20 a field stop igbt ?2010 fairchild semiconductor corporation 7 www.fairchildsemi.com FGB20N60SF rev. c0 mechanical dimensions d 2 pak dimensions in millimeters
FGB20N60SF 600 v, 20 a field stop igbt ?2010 fairchild semiconductor corporation 8 www.fairchildsemi.com FGB20N60SF rev. c0 trademarks the following includes registered and unregistered trademarks and service marks, owned by fairchild se miconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trade marks. *trademarks of system general corporation, used un der license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products here in to improve reliability, function, or design. fairchild does no t assume any liability arising out of the applicati on or use of any product or circuit described herein; neither does i t convey any license under its patent rights, nor t he rights of others. these specifications do not expand the terms of fai rchilds worldwide terms and conditions, specifical ly the warranty therein, which covers these products. life support policy fairchilds products are not authorized for use as critical components in life support devices or syst ems without the express written approval of fairchild semiconductor corporation. as used here in: 1. life support devices or systems are devices or s ystems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the u ser. 2. a critical component in any component of a life s upport, device, or system whose failure to perform can be reasonably e xpected to cause the failure of the life support device or system, o r to affect its safety or effectiveness. product status definitions definition of terms 2cool? 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